The effect of external excitation on the sulphur passivation of GaAs surfaces
- 1 August 1992
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 215 (2) , 179-183
- https://doi.org/10.1016/0040-6090(92)90434-d
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Sulfur passivation of GaAs surfaces: A model for reduced surface recombination without band flatteningApplied Physics Letters, 1989
- X-ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfacesApplied Physics Letters, 1989
- Study of novel chemical surface passivation techniques on GaAs p n junction solar cellsApplied Physics Letters, 1989
- Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAsApplied Physics Letters, 1988
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodesApplied Physics Letters, 1988
- Effect of sodium sulfide treatment on band bending in GaAsApplied Physics Letters, 1988
- Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowthApplied Physics Letters, 1988
- Effects of passivating ionic films on the photoluminescence properties of GaAsApplied Physics Letters, 1987
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987