Thickness dependent dielectric breakdown of PECVD low-k carbon doped silicon dioxide dielectric thin films: modeling and experiments
- 1 April 2003
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 34 (4) , 259-264
- https://doi.org/10.1016/s0026-2692(03)00006-5
Abstract
No abstract availableKeywords
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