Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers
- 31 December 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (12) , 1763-1771
- https://doi.org/10.1016/0038-1101(93)90224-e
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Band offsets in heavily doped p type GeSi/Si(100) strained layers: Applications to design of long wave-length infrared (LWIR) detectorsMicroelectronic Engineering, 1992
- Hole mobility enhancement in MOS-gated Ge/sub x/Si/sub 1-x//Si heterostructure inversion layersIEEE Electron Device Letters, 1992
- Effective mass for strained p-type Si1−xGexJournal of Applied Physics, 1991
- Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arraysIEEE Electron Device Letters, 1991
- A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layersSolid-State Electronics, 1991
- Energy-band structure for strainedp-typePhysical Review B, 1991
- SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxyIEEE Transactions on Electron Devices, 1991
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Bandgap Narrowing Due to Heavy Doping in Si1-xGex LayersPublished by Springer Nature ,1989
- Effective masses for nonparabolic bands in p-type siliconJournal of Applied Physics, 1981