Self-consistent 2-D model for quantum effects in n-MOS transistors
- 1 June 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (6) , 1342-1349
- https://doi.org/10.1109/16.678567
Abstract
No abstract availableKeywords
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