Process-induced particle formation in the sputtering and reactive ion etching of silicon and silicon dioxide

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Abstract
Particle formation has been studied in Ar sputtering plasmas and CCl2F2-Ar reactive ion etching plasmas from Si and SiO2 substrates by laser light scattering, scanning and transmission electron microscopy and optical emission plasma diagnostics. Particles nucleate and grow continuously, and are swept out into the exhaust under a wide variety of plasma conditions. Within a more limited range of values for pressure and flow rate, particles grow large enough in the plasma so as to form a particle cloud suspended above the substrate. Stability and position of the cloud depend on the process conditions. When particles become visible by light scattering, at a diameter of about 200 nm, they are essentially spherical and monodisperse in size, but the size distribution becomes much wider as the average particle size increases with increasing discharge time. In sputtering, particles smaller than about 100 nm are quite porous, have a somewhat more irregular shape and exhibit a spherulitic (spherically columnar) mode of growth. Optical emission spectroscopy of the plasma and compositional analysis of the particles indicate that in all cases, Si atoms are responsible for particle nucleation and growth. These observations are discussed in terms of possible mechanisms for generation and transport of plasma species in the discharge, particle nucleation and growth, particle transport and particle cloud formation.