Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamond
- 1 April 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (4) , 112-114
- https://doi.org/10.1109/55.663531
Abstract
Polycrystalline CVD diamond films with a near surface hydrogenated layer have been used to form the first normally off enhancement mode MESFET structures from this material. A room temperature transconductance of 0.14 mS/mm has been measured, the highest yet reported for a transistor structure made from polycrystalline material. The devices fully turn off, display saturation and have a low gate leakage current. Al forms a near ideal Schottky barrier on this material (SBH /spl sim/0.98 eV, ideality <1.1) and was used as the gate metallization within the MESFET. Optimized forms of these structures would appear to offer a commercially viable route to high-performance diamond based electronic circuits.Keywords
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