Electrical properties of a Schottky barrier formed on a homoepitaxially grown diamond (001) film

This publication has 15 references indexed in Scilit:

• Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds
  Applied Physics Letters, 1994
• Electric Properties of Metal/Diamond Interfaces Utilizing Hydrogen-Terminated Surfaces of Homoepitaxial Diamonds
  Japanese Journal of Applied Physics, 1994
• High-resolution electron-energy-loss spectroscopic study of epitaxially grown diamond (111) and (100) surfaces
  Physical Review B, 1993
• Diffuse reflectance infrared Fourier-transform study of the plasma hydrogenation of diamond surfaces
  Journal of the Chemical Society, Faraday Transactions, 1993
• Diamond thin-film recessed gate field-effect transistors fabricated by electron cyclotron resonance plasma etching
  IEEE Electron Device Letters, 1992
• Properties of metal/diamond interfaces and effects of oxygen adsorbed onto diamond surface
  Applied Physics Letters, 1991
• Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
  Japanese Journal of Applied Physics, 1989
• Schottky barrier heights on p-type diamond and silicon carbide (6h)
  Physics Letters A, 1976
• Determination of boron in natural semiconducting diamond by prompt particle nuclear microanalysis and Schottky barrier differential-capacitance measurements
  Journal of Physics D: Applied Physics, 1976
• The C-V characteristics of Schottky barriers on laboratory grown semiconducting diamonds
  Solid-State Electronics, 1973