Mechanisms of Thin Film Ti And Co Silicide Phase Formation on Deep-Sub-Micron Geometries and Their Implications and Applications To 0.18 °m CMOS and Beyond

This publication has 10 references indexed in Scilit:

• Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep-sub-micron n+ type polycrystalline silicon lines
  Applied Physics Letters, 1995
• Microstructural aspects and mechanism of the C49-to-C54 polymorphic transformation in titanium disilicide
  Journal of Applied Physics, 1995
• Kinetics of the C49 TO C54 Phase Transformation in TiSi2 thin Films on Deep-Sub-Micron Lines
  MRS Proceedings, 1995
• Kinetic mechanisms of theC49-to-C54 polymorphic transformation in titanium disilicide thin films: A microstructure-scaled nucleation-mode transition
  Physical Review B, 1994
• The C49 to C54 Phase Transformation in TiSi2 Thin Films
  Journal of the Electrochemical Society, 1994
• Silicides for integrated circuits: TiSi2 CoSi2
  Materials Science and Engineering: R: Reports, 1993
• Kinetics and Mechanism of the C49 to C54 Titanium Disilicide Polymorphic Transformation
  MRS Proceedings, 1993
• Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
  IEEE Transactions on Electron Devices, 1991
• Formation of thin films of CoSi2: Nucleation and diffusion mechanisms
  Thin Solid Films, 1985
• First Phase Nucleation And Growth Of Titanium Disilicide With An iPhasis On The Influence Of Oxygen
  MRS Proceedings, 1985