The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBT
- 13 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A high quality low temperature oxide technology (LTO) was introduced as the emitter/base junction isolation layer of a Silicon-Germanium. (SiGe) HBT. Due to its lower Ge strain relaxation and boron out-diffusion effect, we showed that devices were obtained with a significant improvement in reliability, DC and RF performance in comparison with those fabricated using conventional LTO or thermal oxidation methods.Keywords
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