Evaluation of dry etch damage in nano-structures by direct transmission electron microscopic examination
- 30 April 1990
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 11 (1-4) , 591-594
- https://doi.org/10.1016/0167-9317(90)90177-u
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Sidewall damage in n+-GaAs quantum wires from reactive ion etchingApplied Physics Letters, 1989
- Passivation of donors in electron beam lithographically defined nanostructures after methane/hydrogen reactive ion etchingJournal of Vacuum Science & Technology B, 1988
- Raman Scattering of Reactive-ion Etched GaAsJournal of Modern Optics, 1988
- NanofabricationMicroelectronic Engineering, 1987
- Novel Methods for the Guidance and Monitoring of Single Cells and Simple Networks in CultureJournal of Cell Science, 1987
- Ultrasmall device fabrication using dry etching of gaasMicroelectronic Engineering, 1986