Electron-pulsed diffusion of Se in GaAs
- 1 September 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (5) , 443-444
- https://doi.org/10.1063/1.91732
Abstract
n+ regions with concentrations exceeding 1019 cm−3 have been formed in GaAs by pulse diffusion with an electron beam. The diffusion source is a deposited As2Se3 film which is removed by the pulse without unduly affecting the initial polished appearance of the GaAs. The resulting doped layers are characterized by exceedingly low carrier mobilities. The well‐known similar deficiency of pulse‐annealed implanted layers would thus appear to be caused by some artifact introduced by the pulse rather than by residual damage unannealed from the implantation. Pulse diffusion should provide an alternative means to implantation for forming n+ contacts in GaAs.Keywords
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