Nonalloyed Ohmic contacts to n-GaAs by pulse-electron-beam-annealed selenium implants
- 15 August 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (4) , 337-339
- https://doi.org/10.1063/1.91113
Abstract
Nonalloyed Ohmic contacts to n‐GaAs have been formed by vapor deposition of TiPtAu on pulse‐electron‐beam‐annealed Se‐implanted surfaces. Peak carrier concentrations were about 1.2×1019/cm3, yielding a specific contact resistance rc≲6×10−7 Ω cm2.Keywords
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