Model for the diffusion of zinc in gallium arsenide

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Abstract
The anomalous shape of the Zn diffusion profile in GaAs has been quantitatively explained. The Frank–Turnbull mechanism is invoked to govern the interchange between interstitial and substitutional Zn, via the Ga vacancies. These vacancies are proposed to be either neutral or singly ionized, depending on the position of the Fermi level. In addition, two physical phenomena are proposed. Substitutional Zn thermally generates interstitial Zn-Ga vacancy pairs and there is pairing between the donor, interstitial Zn, and the acceptor, substitutional Zn. The model is found to be in good agreement with the experimental data.