In incorporation in GaInAs grown by molecular beam epitaxy
- 8 June 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (23) , 2911-2913
- https://doi.org/10.1063/1.106817
Abstract
A study of In segregation during molecular beam epitaxial growth of GaInAs is reported. We find that In segregates to the surface during growth above approximately 550 °C and a constant surface concentration forms at low In flux. If the In flux is increased, a continuous buildup of In can occur due to the segregation rate not being balanced by the re-evaporation rate. Up to two monolayers of In may have segregated onto the surface during the growth of 200 Å of Ga0.75In0.25As at 560 °C. The In surface buildup appears to be suppressed by increasing the arsenic to group III flux ratio. A continuing incident Ga flux, after the In flux has been terminated, significantly prolongs the surface recovery time. The implications of these results for the growth of GaAs/GaInAs multiple quantum well layers is discussed.Keywords
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