Indium bound exciton luminescence in silicon
- 29 August 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 27 (7) , 705-708
- https://doi.org/10.1016/0038-1098(78)90006-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- A high resolution investigation of the recombination radiation from Si containing the acceptors B, Al, Ga, In and TlJournal of Luminescence, 1977
- A shell model of bound multiexciton complexes in siliconCanadian Journal of Physics, 1977
- Stress Study of Donor Exciton Satellites in Silicon: Existence of Multiple Donor-Bound Excitons Strongly RequestionedPhysical Review Letters, 1977
- Details of the structure of bound excitons and bound multiexciton complexes in SiCanadian Journal of Physics, 1977
- Fine structure in the bound exciton and multiple bound exciton luminescence from aluminium-doped siliconJournal of Physics C: Solid State Physics, 1977
- Excited states of donor bound excitons and bound multiexciton complexes in siliconSolid State Communications, 1977
- A new model for bound multiexciton complexesSolid State Communications, 1977
- Fine Structure of the Luminescence from Excitons and Multiexciton Complexes Bound to Acceptors in SiPhysical Review Letters, 1977
- Donor Exciton Satellites in Cubic Silicon Carbide: Multiple Bound Excitons RevisitedPhysical Review Letters, 1976
- Magnetic Field and Stress-Induced Splitting of the Novel Sharp Emission Line Series in Silicon Associated with P, Li, or B: No Bound Multiple-Exciton ComplexesPhysical Review Letters, 1976