High- Purity inp grown by hydride vpe technique with impurity gettering by indium source and oxygen
- 1 September 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (5) , 891-902
- https://doi.org/10.1007/bf02655301
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- LPE growth of high purity InP and In1−xGaxP1−yAsyJournal of Crystal Growth, 1982
- Vapor Phase Growth of InGaAsP/InP DH Structures by the Dual-Growth-Chamber MethodJapanese Journal of Applied Physics, 1980
- The electrical properties of vapour epitaxial indium phosphide grown in the presence of oxygenJournal of Crystal Growth, 1979
- InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelengthApplied Physics Letters, 1978
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Electron Transport in InSb, InAs, and InPPhysical Review B, 1971
- Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 systemJournal of Crystal Growth, 1971