Substrate effects in Si-Al solid phase epitaxial growth
- 1 December 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 55 (2) , 235-242
- https://doi.org/10.1016/0040-6090(78)90054-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Some aspects of Ge epitaxial growth by solid solutionJournal of Applied Physics, 1976
- Kinetics of the Initial Stage of Si Transport Through Pd‐Silicide for Epitaxial GrowthJournal of the Electrochemical Society, 1975
- Solid-phase epitaxial growth of Si through palladium silicide layersJournal of Applied Physics, 1975