Large-area uniform growth of 〈100〉 Si through Al film by solid epitaxy
- 15 July 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (2) , 125-126
- https://doi.org/10.1063/1.89583
Abstract
Epitaxial and uniform growth of a 0.6‐μm‐thick silicon layer was obtained in large areas at 530 °C by the dissolution and transport of an evaporated Si layer through an Al film using the Si/Al (evaporated)Si (evaporated) structure. Channeling measurements showed that the grown Si layers are well ordered and epitaxial with the underlying 〈100〉 substrate. The lateral uniformity is verified by scanning electron microscopy and electron microprobe measurements. Electrical measurements indicate that the grown layer is p type with 2×1018 cm−3 hole concentration and 65 cm2/V sec Hall mobility.Keywords
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