Minority carrier capture cross section of the EL2 defect in GaAs
- 16 November 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (20) , 2452-2454
- https://doi.org/10.1063/1.108149
Abstract
The EL2 defect in GaAs possesses two levels E1 and E2 located in the gap at 0.75 eV below the conduction band (E1) and 0.5 eV above the valence band (E2) for which only the majority carrier (electron for E1 and hole for E2) capture cross sections have been determined. We present a study in which the occupancy of the E1 level under minority carrier injection, monitored by deep level transient spectroscopy, provides the value of the capture cross section of holes on the E1 level. This enables us to estimate the contribution of the EL2 defect to the minority carrier lifetime in GaAs materialsKeywords
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