Millimeter-wave design considerations for power amplifiers in an SiGe process technology
- 10 January 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 54 (1) , 57-64
- https://doi.org/10.1109/tmtt.2005.860898
Abstract
This paper describes a number of significant modeling considerations for SiGe heterojunction bipolar transistor power amplifiers operating at millimeter-wave frequencies. Small- and large-signal model-to-hardware correlation is presented for single transistor amplifiers, as well as for a combined dual-stage amplifier up to 65 GHz. The relevant parasitic effects are described along with the proposed modeling approach for each of them. The limits of the standard Vertical Bipolar Inter-Company device model at high-injection and their effect on the prediction of the achievable large-signal compression and power-added efficiency are also discussed.Keywords
This publication has 26 references indexed in Scilit:
- Enhanced high-current VBIC modelIEEE Transactions on Microwave Theory and Techniques, 2005
- Pure-mode network analyzer concept for on-wafer measurements of differential circuits at millimeter-wave frequenciesIEEE Transactions on Microwave Theory and Techniques, 2005
- On-chip SiGe transmission line measurements and model verification up to 110 GHzIEEE Microwave and Wireless Components Letters, 2005
- Silicon GermaniumPublished by Wiley ,2003
- Bias circuits for GaAs HBT power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- VBIC model applicability and extraction procedure for InGap/GaAs HBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel transistor model for simulating avalanche-breakdown effects in Si bipolar circuitsIEEE Journal of Solid-State Circuits, 2002
- Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technologyIEEE Electron Device Letters, 2002
- Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistorsIEEE Transactions on Electron Devices, 2001
- Design and fabrication of a wideband 56- to 63-GHz monolithic power amplifier with very high power-added efficiencyIEEE Journal of Solid-State Circuits, 2000