Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors
- 1 April 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 48 (4) , 774-783
- https://doi.org/10.1109/16.915725
Abstract
The onset of impact-ionization-induced instabilities limits the operating range of Si-bipolar transistors, especially in power stages. Therefore, analytical relations which characterize the onset of instabilities are derived for different driving conditions (mainly V/sub BE/=const. and I/sub E/=const.) and arbitrary transistor geometries. They allow the designer and technologist to calculate the maximum usable dc output voltage in dependence on transistor dimensions and technological parameters. As a consequence, the voltage range above BV/sub CE0/ can now be more intensively and reliably used and thus the performance potential of a given technology can be better exploited. However, the reduction of the maximum tolerable output voltage with increasing emitter (or collector) current must be carefully considered. The presented theory and analytical results are verified by three-dimensional (3-D) transistor simulations and by measurements.Keywords
This publication has 18 references indexed in Scilit:
- Non-local impact ionization in silicon devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Analytical current-voltage relations for compact SiGe HBT models. I. The "idealized" HBTIEEE Transactions on Electron Devices, 1999
- SPICE modelling of impact ionisation effects in silicon bipolar transistorsIEE Proceedings - Circuits, Devices and Systems, 1996
- TRANSIENT AND SMALL‐SIGNAL HIGH‐FREQUENCY SIMULATION OF NUMERICAL DEVICE MODELS EMBEDDED IN AN EXTERNAL CIRCUITCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1991
- Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditionsSolid-State Electronics, 1991
- Simulation and modeling of the low-frequency base resistance of bipolar transistors and its dependence on current and geometryIEEE Transactions on Electron Devices, 1991
- Impact ionization in silicon: A review and updateSolid-State Electronics, 1990
- Base spreading resistance of square-emitter transistors and its dependence on current crowdingIEEE Transactions on Electron Devices, 1989
- Measurement of the ionization rates in diffused silicon p-n junctionsSolid-State Electronics, 1970
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957