Pulsed CV system for ion implantation control
- 1 October 1981
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research
- Vol. 189 (1) , 219-225
- https://doi.org/10.1016/0029-554x(81)90149-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Doping Profiles by MOSFET Deep Depletion C(V)Journal of the Electrochemical Society, 1975
- Using the MIS capacitor for doping profile measurements with minimal interface state errorIEEE Transactions on Electron Devices, 1973
- Rapid determination of semiconductor doping profiles in MOS structuresSolid-State Electronics, 1973
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966