Inversion Domain Boundary Dislocations in Heteroepitaxial Films
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Transmission electron microscope (TEM) images of inversion domain boundaries (IDB) show fringe contrast, thus indicating a relative displacement between the two adjoining domains. When the IDBs are facetted, different facets may have different displacement fault vectors. This implies that when the facetting changes from one plane to another, there should be a dislocation at the intersection of the planes. This is termed an “inversion domain boundary dislocation” and it will have a Burgers vector b=R1–R2 where R1, and R2 are the fault vectors of the two facets. Experimental results for facetted IDBs and IDB dislocations in SiC grown heteroepitaxially on (001) silicon are presented.Keywords
This publication has 8 references indexed in Scilit:
- An Investigation of the Heteroepitaxial Growth of Beta—silicon Carbide Thin Filmson Silicon SubstratesMRS Proceedings, 1988
- Location of atoms in the first monolayer of GaAs on SiPhysical Review Letters, 1987
- Antiphase boundaries in epitaxially grown β-SiCApplied Physics Letters, 1987
- Lattice Defects in β-Sic Grown Epitaxially On Silicon SubstratesMRS Proceedings, 1987
- Characterization of Dislocations in GaAs Grown on Si and GeMRS Proceedings, 1987
- Antiphase boundaries in GaAsApplied Physics Letters, 1985
- Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and filmsJournal of Vacuum Science & Technology B, 1983
- Antiphase boundaries in semiconducting compoundsJournal of Physics and Chemistry of Solids, 1969