Palladium–silver–oxygen–cesium photocathode
- 1 October 1981
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 52 (10) , 1487-1489
- https://doi.org/10.1063/1.1136480
Abstract
A low surface resistivity, semitransparent photocathode consisting of a palladium–silver–oxygen–cesium layer has been developed. It has been shown to have near infrared (NIR) response which extends to cut-off wavelengths ∼1.5 μm. The processing scheme and its effect on the photoemission characteristics of this photocathode are described.Keywords
This publication has 9 references indexed in Scilit:
- Field-assisted photoemission to 2.1 microns from a Ag/p-In0.77Ga0.23As photocathodeApplied Physics Letters, 1980
- Negative affinity 3–5 photocathodes: Their physics and technologyApplied Physics A, 1977
- High-quantum-efficiency photoemission from an InGaAsP photocathodeApplied Physics Letters, 1976
- CONVENTIONAL AND NEGATIVE ELECTRON AFFINITY PHOTOEMITTERSLe Journal de Physique Colloques, 1973
- Long-Wavelength Photoemission from InAs1−xPxApplied Physics Letters, 1971
- 3-5 compound photocathodes: A new family of photoemitters with greatly improved performanceProceedings of the IEEE, 1970
- Increased Sensitivity in Silver–Cesium–Oxygen Photocathodes Using Optical EffectsApplied Optics, 1968
- Thermionic and Semiconducting Properties of [Ag]–Cs2O, Ag, CsJournal of Applied Physics, 1957
- The Resistance of Semitransparent PhotocathodesJournal of Applied Physics, 1956