Long-Wavelength Photoemission from InAs1−xPx
- 15 November 1971
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10) , 431-433
- https://doi.org/10.1063/1.1653759
Abstract
Efficient photoemission from InAs1−xPx (Cs–O) with a band-gap-limited threshold at 1.4 μ was observed. Indirect measurements of the composition and thickness of the Cs–O low-work-function surface suggest that the surface consists of about one monolayer of Cs, followed by approximately one monolayer of cesium oxide. These data make an interpretation of the low-work-function properties of Cs–O in terms of the heterojunction model (based on the bulk properties of Cs2O) questionable.Keywords
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