New laterally selective growth technique by metalorganic chemical vapor deposition
- 6 January 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (1) , 30-32
- https://doi.org/10.1063/1.96751
Abstract
Laterally selective growth of III-V compounds has been successfully demonstrated by metalorganic chemical vapor deposition. This was achieved by using a specially designed growth chamber and susceptor that allows the substrate to move with respect to a stationary GaAs or Si mask. We have used this technique to selectively deposit GaAs1−xPx with different values of x and a GaAs-GaAsP superlattice on a single GaAs substrate. We have also selectively grown multiple color light-emitting diodes on a GaAs substrate.Keywords
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