Stable operation in 0.87-μm light-emitting diode on Si substrate using Al-free materials
- 1 November 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 7 (11) , 1264-1266
- https://doi.org/10.1109/68.473466
Abstract
A reliable 877-nm InGaP-GaAs light-emitting diode (LED) is grown on a Si substrate by metalorganic chemical vapor deposition. A conventional Al-contained AlGaAs-GaAs LED on a Si substrate exhibits a rapid degradation because of formation of dark-line defects (DLD's). On the contrary, an Al-free InGaP-GaAs LED on a Si substrate has no significant growth of DLD's, As a result, a stable operation for more than 1500 h has been achieved in an InGaP-GaAs LED on a Si substrate.< >Keywords
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