Monolithic integration of AlGaAs/GaAs MQW laser diode and GaAs MESFET grown on Si using selective regrowth
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (6) , 612-614
- https://doi.org/10.1109/68.141985
Abstract
The first monolithic integration of an AlGaAs/GaAs laser diode and a GaAs MESFET has been grown on an SiO/sub 2/ back-coated Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD). The selectively regrown GaAs MESFET, with a gate length of 2.5 mu m and gate width of 400 mu m, shows a good pinch-off characteristic, a transconductance of 88 mS/mm and a threshold voltage of -2.25 V. This is caused by using the SiO/sub 2/ back-coated Si substrate. The light output of the laser diode in the monolithically integrated device can be modulated by the MESFET.<>Keywords
This publication has 9 references indexed in Scilit:
- 1000 h stable operation of AlGaAs/GaAs light emitting diodes on Si substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layerApplied Physics Letters, 1991
- Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layersIEEE Journal of Quantum Electronics, 1991
- Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor depositionApplied Physics Letters, 1991
- Metalorganic chemical vapor deposition growth of undoped GaAs with a low electron concentration on a Si substrateApplied Physics Letters, 1990
- Low-threshold continuous-wave room-temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coatingApplied Physics Letters, 1990
- Room-temperature continuous operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on SiApplied Physics Letters, 1987
- Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET'sIEEE Electron Device Letters, 1986
- GaAs MESFET ring oscillator on Si substrateIEEE Transactions on Electron Devices, 1985