1.2 V operation power heterojunction FET's for digital cellular applications
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (2) , 361-365
- https://doi.org/10.1109/16.658667
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- 3 V operation L-band power double-doped heterojunction FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 1.5 V-operation GaAs spike-gate power FET with 65% power-added efficiencyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 1.2 V operation 1.1 W heterojunction FET for portable radio applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Double-doped power heterojunction FET for 1.5 V digital cellular applicationsSolid-State Electronics, 1997
- 2.2 V Operation power heterojunction FETfor personal digital cellular telephonesElectronics Letters, 1995