Interface Analysis of Al2O3/InP Structure Prepared by Molecular Beam Deposition
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10R)
- https://doi.org/10.1143/jjap.26.1615
Abstract
We have applied disorder-sensitive high-energy ion scattering together with the C-V method to an interface study of Al2O3/InP, which was prepared with well-controlled molecular beam deposition. Low interface state densities (the minimum value near the midgap is ∼1×1011cm-2eV-1) have been obtained in the present work. Measurements of the interface disorder for these samples suggest that there is a correlation between the interface state density and the interface disorder. It is necessary to lower the interface disorder to obtain low interface state densities.Keywords
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