Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices
- 29 November 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 71 (22) , 3717-3720
- https://doi.org/10.1103/physrevlett.71.3717
Abstract
We have directly measured the transport of heavy-hole excitons in a type-II GaAs/AlAs superlattice. Our results constitute the first direct confirmation of exciton localization in type-II structures and thermal activation to more mobile states. We have also developed a quantitative model to explain our transport and kinetics results, and have obtained the nonradiative interfacial defect density.Keywords
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