Relationship between microstructure and electromigration damage in unpassivated PVD copper damascene interconnects
- 1 August 2000
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 40 (8-10) , 1295-1299
- https://doi.org/10.1016/s0026-2714(00)00140-2
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Microstructure and reliability of copper interconnectsIEEE Transactions on Electron Devices, 1999
- Electromigration path in Cu thin-film linesApplied Physics Letters, 1999
- Texture analysis of damascene-fabricated Cu lines by x-ray diffraction and electron backscatter diffraction and its impact on electromigration performanceJournal of Applied Physics, 1999
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