On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
- 1 September 2002
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 92 (5) , 2501-2505
- https://doi.org/10.1063/1.1499749
Abstract
Transmission electron microscopy was used to investigate B11, C12, N14, Al27, Si28, and Ar37 ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic dislocation loops of interstitial type are formed on the SiC basal plane with a depth distribution roughly corresponding to the distribution of the implanted ions. The investigation reveals that in samples where the implanted ions are substituting for a position in the silicon sublattice, generating an excess of interstitial silicon, the dislocation loops are more readily formed than in a sample implanted with an ion substituting for carbon.This publication has 23 references indexed in Scilit:
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