KrF excimer laser projection patterned deposition of aluminum from triethylamine alane as adsorbate precursor
- 3 May 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (18) , 2173-2175
- https://doi.org/10.1063/1.109459
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- High deposition rate laser direct writing of Al on SiApplied Physics Letters, 1991
- Complete planarization of via holes with aluminum by selective and nonselective chemical vapor depositionApplied Physics Letters, 1990
- Surface organometallic chemistry in the chemical vapor deposition of aluminum films using triisobutylaluminum: .beta.-hydride and .beta.-alkyl elimination reactions of surface alkyl intermediatesJournal of the American Chemical Society, 1989
- Gas-Temperature-Controlled (GTC) CVD of Aluminum and Aluminum-Silicon Alloy Film for VLSI ProcessingJapanese Journal of Applied Physics, 1988
- Laser direct writing of aluminum conductorsApplied Physics Letters, 1988
- The growth and characterization of AlGaAs using dimethyl aluminum hydrideJournal of Crystal Growth, 1986
- Patterned aluminum growth via excimer laser activated metalorganic chemical vapor depositionApplied Physics Letters, 1986
- Patterned photonucleation of chemical vapor deposition of Al by UV-laser photodepositionApplied Physics Letters, 1984
- Characterization of LPCVD Aluminum for VLSI ProcessingJournal of the Electrochemical Society, 1984
- Aluminum films prepared by metal-organic low pressure chemical vapor depositionThin Solid Films, 1984