The characteristics of the copper-induced 1.35 eV emission band in p-GaAs
- 16 May 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 29 (1) , 339-345
- https://doi.org/10.1002/pssa.2210290138
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Effect of heat treatment on the 0.93, 1.0, and 1.28 ev luminescence bands in n-GaAsPhysica Status Solidi (a), 1973
- Radiative recombination at donor-acceptor pairs and at higher associatesJournal of Luminescence, 1973
- The characteristics of the 0.93 to 1.0 ev luminescence bands in GaAsPhysica Status Solidi (a), 1971
- Donor—acceptor pairs in semiconductorsPhysica Status Solidi (b), 1968
- The role of acceptors in the luminescence of n-type GaAsJournal of Physics and Chemistry of Solids, 1967