Low temperature buffer growth for modulation doped SiGe/Ge/SiGe heterostructures with high hole mobility
- 1 July 2000
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 369 (1-2) , 320-323
- https://doi.org/10.1016/s0040-6090(00)00872-5
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
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