Microstructures of Hydrogenated Silicon Films Prepared by Ion Plating

Publisher Website
Google Scholar
Abstract
Hydrogenated Si are prepared by ion plating in a pure hydrogen atmosphere and their microstructures are investigated by using a transmission electron microscope and a Fourier-transform infrared spectrometer. The structures of such films change from amorphous to microcrystalline when the RF input power is increased or when the bias voltage of substrates is increased from a negative to a positive value. The structures are also affected by the electrical conductivity of the substrates. When insulating substrates are used, the films tend to have the microcrystalline-type structures due to an accumulation of positive charge. Mass and optical emission spectroscopy suggest that such trends regarding crystallization occur due to an increase in H radicals and a decrease in ionic species impinging onto a substrate during deposition.