Ion bombardment in rf plasmas
- 15 October 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (8) , 3916-3934
- https://doi.org/10.1063/1.346278
Abstract
Ion bombardment energy and angle distributions have been measured in an argon plasma. The measured ion angle distribution at 10 mTorr shows that 30% of the ions have incident angles greater than 10° from the surface normal. However, ions with large incident angles have much lower energies than those incident perpendicular to the surface. At 500 mTorr a very large fraction of the ions have large incident angles, and the average energies of these ions are relatively independent of incident angle. Monte Carlo simulations of the sheath kinetics predict the trends shown in the experimental data for ion energy and angle distributions. Fine structure in the ion energy distribution was observed below 50 mTorr and is shown to be caused by charge‐exchange collisions in the sheath. The average ion energy in a symmetric parallel plate system is linearly related to the voltage applied across the electrodes for measured plasma pressures up to 500 mTorr.This publication has 35 references indexed in Scilit:
- Ion-induced etching of SiO2: The influence of mixing and lattice damageJournal of Applied Physics, 1988
- Ion-bombardment-enhanced plasma etching of tungsten with NF3/O2Journal of Vacuum Science & Technology B, 1988
- Chemically enhanced ion etching on refractory metal silicidesJournal of Vacuum Science & Technology A, 1988
- Phenomena produced by ion bombardment in plasma-assisted etching environmentsJournal of Vacuum Science & Technology A, 1988
- Sputtering of SiO2 in a XeF2 and in a Cl2 atmosphereJournal of Vacuum Science & Technology B, 1986
- Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow dischargesPlasma Chemistry and Plasma Processing, 1986
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Low Energy Ion Beam EtchingJournal of the Electrochemical Society, 1981
- Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ionSurface Science, 1981
- Chemical sputtering of fluorinated siliconPhysical Review B, 1981