Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique
- 1 August 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 121 (4) , 781-789
- https://doi.org/10.1016/0022-0248(92)90586-8
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
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