A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistor
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (5) , 726-733
- https://doi.org/10.1109/16.285024
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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