A temperature-dependent SOI MOSFET model for high-temperature application (27 degrees C-300 degrees C)
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (9) , 2101-2111
- https://doi.org/10.1109/16.83736
Abstract
No abstract availableKeywords
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