The punchthrough device as a passive exponential load in fast static bipolar RAM cells
- 1 October 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (5) , 840-844
- https://doi.org/10.1109/jssc.1979.1051281
Abstract
No abstract availableKeywords
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