Control and characterization of ZnO/GaN heterointerfaces in plasma-assisted MBE-grown ZnO films on GaN/Al2O3
- 1 June 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 159-160, 441-448
- https://doi.org/10.1016/s0169-4332(00)00053-2
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: transmission electron microscopy and triple-axis X-ray diffractometryJournal of Crystal Growth, 2000
- Plasma assisted molecular beam epitaxy of ZnO on c -plane sapphire: Growth and characterizationJournal of Applied Physics, 1998
- High temperature excitonic stimulated emission from ZnO epitaxial layersApplied Physics Letters, 1998
- Characterization and control of II–VI/III–V heterovalent interfacesJournal of Crystal Growth, 1998
- Kinetic Study of the Oxidation of Gallium Nitride in Dry AirJournal of the Electrochemical Society, 1998
- Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxyJournal of Crystal Growth, 1997
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997
- MBE growth and properties of ZnO on sapphire and SiC substratesJournal of Electronic Materials, 1996
- Heterojunction band offset engineeringSurface Science Reports, 1996
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters, 1992