Dependence of the Saturation of Light-Induced Defect Density in a-Si:H on Temperature and Light Intensity
- 1 November 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (11R)
- https://doi.org/10.1143/jjap.31.3500
Abstract
We studied the temperature and intensity dependence of the saturated density of light-induced defects (N sat) in hydrogenated amorphous silicon (a-Si:H), established by high-intensity Kr+ laser illumination. The saturation value is insensitive to temperature below about 90°C. Above 90°C, N sat drops with increasing temperature. This behavior can be explained within the defect pool model by a limited number of defect sites coupled with the concept of defect equilibrium. The experimental data suggest that the tail states do not direcily affect N sat in device-quality a-Si:H.Keywords
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