Annealing behaviors of residual defects in high-dose BF+2-implanted (001)Si under different implantation conditions
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 193-197
- https://doi.org/10.1016/0168-583x(91)96160-m
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- BF 2 + Ion Implantation in Silicon: Effects of the In‐Flight DissociationJournal of the Electrochemical Society, 1988
- Lattice Damage, Boron Diffusion, and Dopant Activation in BF 2 Implanted LayersJournal of the Electrochemical Society, 1987
- Cross-sectional transmission electron microscope study of residual defects in BF+2-implanted (001)SiJournal of Applied Physics, 1986
- Optimization of BF2+ implanted and rapidly annealed junctions in siliconJournal of Applied Physics, 1986
- Characterization of microstructural defects in BF+2 -implanted siliconJournal of Applied Physics, 1985
- Shallow boron-doped junctions in siliconJournal of Applied Physics, 1985
- Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted siliconApplied Physics Letters, 1984
- Influence of F and Cl on the recrystallization of ion-implanted amorphous SiJournal of Applied Physics, 1984
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Anomalous Boron Profiles Produced by BF 2 Implantation into SiliconJournal of the Electrochemical Society, 1980