On the investigation of the diffusion processes of photoexcited carriers in silicon by ps-reflectivity measurements
- 28 February 1985
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 30 (1-4) , 114-119
- https://doi.org/10.1016/0022-2313(85)90046-8
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the investigation of laser-induced carriers in silicon in the picosecond time rangeOptical and Quantum Electronics, 1983
- Dependence of the Ambipolar Diffusion in Silicon on the Carrier DensityPhysica Status Solidi (a), 1983
- Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effectsPhysical Review B, 1982
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974