Effect of confining layer aluminum composition on AlGaAs-GaAs-InGaAs strained-layer quantum well heterostructure lasers
- 27 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9) , 843-845
- https://doi.org/10.1063/1.103408
Abstract
No abstract availableKeywords
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