Infrared attenuated-total-reflection spectroscopy of microcrystalline silicon growth
- 1 May 2000
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 266-269, 54-58
- https://doi.org/10.1016/s0022-3093(99)00726-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Low temperature growth of highly crystallized silicon thin films using hydrogen and argon dilutionJournal of Non-Crystalline Solids, 1998
- Three color piiin-detector using microcrystalline siliconJournal of Non-Crystalline Solids, 1998
- On the Way Towards High Efficiency Thin Film Silicon Solar Cells by the “Micromorph” ConceptMRS Proceedings, 1996
- Recent Progress in Microcrystalline Semiconductor Thin FilmsMRS Proceedings, 1996
- Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of SiliconJapanese Journal of Applied Physics, 1995
- Role of Hydrogen Plasma during Growth of Hydrogenated Microcrystalline Silicon: In Situ UV-Visible and Infrared Ellipsometry StudyJapanese Journal of Applied Physics, 1994
- Optical Properties and Structure of Microcrystalline SiliconMRS Proceedings, 1992
- The role of hydrogen in a-Si:H — results of evolution and annealing studiesJournal of Non-Crystalline Solids, 1983
- Phonons in polysilane alloysPhysical Review B, 1982
- Raman Spectra of Amorphous Si and Related Tetrahedrally Bonded SemiconductorsPhysical Review Letters, 1971