Model correction for the formation of amorphous silicon by ion implantation
- 1 January 1973
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 19 (1) , 67-68
- https://doi.org/10.1080/00337577308232220
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and DoseJournal of Applied Physics, 1972
- Ion implantation in semiconductors—Part II: Damage production and annealingProceedings of the IEEE, 1972
- ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICONApplied Physics Letters, 1970
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- Ion implantation in semiconductors—Part I: Range distribution theory and experimentsProceedings of the IEEE, 1968