High current gain InGaP/GaAs heterojunction bipolar transistors grown by multi-wafer gas-source molecular beam epitaxy system
- 1 May 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 150, 1281-1286
- https://doi.org/10.1016/0022-0248(95)80145-3
Abstract
No abstract availableKeywords
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